Synthesis of GaN nanowires by ammoniating Ga2O3/BN
DOI:
https://doi.org/10.56053/4.2.21Keywords:
Sputtering, GaN, PhotoluminesAbstract
GaN nanowires were successfully prepared on Si (111) substrate through ammoniating Ga2O3/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.
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