Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Authors

  • Halima Mazari Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Kheira Ameur Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Aicha Boumesjed Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Reski Khelifi Renewable Energy Applied Research Unit, URAER, Development Center of Renewable Energies, CDER, 47133, Ghardaïa, Algeria Author
  • Sedik Mansouri Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Nadia Benseddik Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Nawal Benyahya Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Zineb Benamara Applied Microelectronics Laboratory, Department of Electronics, Faculty of Electrical Engineering, Djillali Liabes University of Sidi Bel-Abbes, BP: 89, 22000, Sidi Bel-Abbes, Algeria Author
  • Jean-Marie Bluet Lyon Institute of Nanotechnology INL-UMR5270, CNRS, INSA Lyon, Villeurbanne F-9621, France Author

DOI:

https://doi.org/10.56053/4.1.11

Keywords:

I-V characteristics, Gallium nitride free-standing, Schottky diode, Analytical modeling.

Abstract

The current–voltage (I–V) characteristics of Schottky diodes on free-standing GaN substrate are investigated by using electrical characterization and analytical modelling calculation. We have calculated the electrical parameters from experimental current-voltage curve by two methods: ln(I) and Cheung. So, we calculated different electrical parameters using experimental I-V curve such as saturation current, ideality factor, series resistance and barrier height. We have found from the first method, the ideality factor n (1.02), the barrier height fb (0.65 eV) and a series resistance Rs (84 Ω). From the second method, we have found, n (1.09), fb (0.79 eV) and Rs (79.58 Ω - 79.73 Ω). Using analytical approach, we plotted the theoretical curves for comparison with the experimental characteristic and also to determine the dominant current transport mechanism. The results found support an assumption that the dominant current mechanism in Au/n-GaN (free-standing substrate) Schottky diode is the thermionic current.

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Published

2020-01-15

Issue

2020: Volume 4 Issue 1

Section

Articles

How to Cite

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate . (2020). Experimental and Theoretical NANOTECHNOLOGY, 4(1), 11-20. https://doi.org/10.56053/4.1.11