Fabrication of GaN-based LEDs
DOI:
https://doi.org/10.56053/6.3.93Keywords:
GaN, LED, FabricationAbstract
The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.
References
-[1] Abdulrahman Khaleel Suliman, Mustafa Saeed Omar, Exp. Theo. NANOTECHNOLOGY 5 (2021) 65
-[2] Schubert EF, Kim JK. Science 308 (2005) 1274
-[3] Omar A. Abdulrazzaq, Siham M. Saeed, Zainab H. Ali, Saad A. Tuma, Omar A. Ahmed, Abdulkareem A. Faridoon, Shaima K. Abdulridha, Exp. Theo. NANOTECHNOLOGY 5 (2021)77
-[4] Lan WH. IEEE Transactions on Electron Devices 52 (2005) 1217
-[5] Wang WK, Wuu DS, Lin SH, Han P, Horng RH, Hsu TC, et al. IEEE Journal of Selected Topics in Quantum Electronics 41 (2005) 1403
-[6] Cuong TV, Cheong HS, Kim HG, Kim HY, Hong CH, Suh EK, Applied Physics Letters 90 (2007) 131107
-[7] Sheu JK, Hung IH, Lai WC, Shei SC, Lee ML. Applied Physics Letters 93 (2008) 103507
-[8] Kim HG, Cuong,1 TV, Jeong H, Woo SH, Cha OH, Suh EK, Applied Physics Letters 92 (2008) 061118
-[9] Lin HC, Lin RS, Chyi JI. Applied Physics Letters 92 (2008) 161113
-[10] Huh C, Lee JM, Kim DJ, Park SJ. Journal of Applied Physics 92 (2002) 2248
-[11] Chang SJ, Shen CF, Chen WS, Ko TK, Kuo CT, Yu KH, Electrochemical and Solid-State Letters 10 (2007) H175
-[12] Liu CC, Chen YH, Houng MP, Wang YH, Su YK, Chen WB, IEEE Photonics Technology Letters 16 (2004) 1444
-[13] F. Vervliet, D. Willinger, L. C. Alvarez, Exp. Theo. NANOTECHNOLOGY 5 (2021) 169
-[14] Polyakov AY, Smirnov NB, Govorkov AV, Baik KH, Pearton SJ, Luo B, Journal of Applied Physics 92 (2003) 3960
-[15] Chang SJ, Wei SC, Su YK, Chuang RW, Chen SM, Li WL. IEEE Photonics Technology Letters 17 (2005) 1806
-[16] Chang SJ, Chang CS, Su YK, Lee CT, Chen WS, Shen CF, et al. IEEE Transactions on Advanced Packaging 28 (2005) 273
-[17] Alfarooq O. Basheer, S. Abdullah2, V. K. Arora, Exp. Theo. NANOTECHNOLOGY 5 (2021) 175
-[18] A. Subhi, M. A. Saeed, Exp. Theo. NANOTECHNOLOGY 5 (2021) 181
-[19] Chang SJ, Chang CS, Su YK, Chuang RW, Lin YC, Shei SC, IEEE Journal of Quantum Electronics 39 (2003) 1439
