Synthesis of GaN by electrochemical method at low temperature

Abstract

The growth of GaN thin films using this technique is still a challenge. According to our knowledge, up to now there are limited theoretical and experimental studies on ECD of GaN [7,8].  In our previous work we presented a synthesis of GaN thin film using a simple and low-cost ECD on n-Si (1 1 1) substrates and for the first time below room temperature at 20 ^oC using different current densities and constant deposition duration. In order to have a deeper insight on the growth mechanism of GaN films by ECD, study on the effects of deposition time is desirable.