GaN on Si (111) nanostructure for solar cells application

Authors

  • M. Al-Jassim National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA Author
  • G. Grüner Department of Physics, University of California Los Angeles, 405 Hilgard Avenue, Los Angeles, CA 90095, USA Author
  • J. Guo Department of Industrial Engineering and Operations Research, Columbia University in the City of New York, New York, NY, 10027, USA Author

DOI:

https://doi.org/10.56053/6.2.37

Keywords:

GaN, Si, Solar cells

Abstract

The fabrications of nanostructured GaN by electrochemical etching and laser-induced etching have been attempted.  Laser processing has the advantages of not causing damage or contamination, as well as of special selectivity with high resolution and high efficiency.  The studies on the fundamental properties of these nanostructures are very important due to their unique structural and optical properties relative to the bulk form of the corresponding material. To the best of our knowledge, this has never been reported before.

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Published

2022-04-15

Issue

2022: Volume 6 Issue 2

Section

Articles

How to Cite

GaN on Si (111) nanostructure for solar cells application . (2022). Experimental and Theoretical NANOTECHNOLOGY, 6(2), 37-42. https://doi.org/10.56053/6.2.37