Optical investigation of Si:SiO2/SiO2 film

Abstract

The optical properties of 30-layer [nc-Si:SiO₂/ SiO₂]₃₀ periodic films have been studied. The films were prepared by alternately evaporating SiO and SiO₂ onto Si(100) substrates, followed by annealing at 1100 ^◦C. Spectroscopic ellipsometry spectrum analysis was used to deter- mine the optical constants of the samples via the Forouhi–Bloomer model. The optical bandgap of a single periodic film is calculated. The photoluminescence (PL) spectra of three samples with different thicknesses clearly show that there are two physical origins of the PL process.