Charge transfer in copper oxide nanostructure

Abstract

The deposition potential affects the structural, morphological, optical, and electrochemical impedance spectroscopy properties of cuprous oxide (Cu2O) thin films formed on copper (Cu) substrates adopting a three-electrode electrochemical deposition procedure. XRD data revealed that the deposited films have a cubic structure established with desired (111) growth orientation. Scanning electron microscopy (SEM) images reveal that Cu2O film has very well three-sided pyramid-shaped grains which are equally spread over the surface of the Cu substrates and change substantially when the plating potential is changed. The photo-current density of prepared Cu2O thin films was increased from -1.41×10^-4 to -3.01×10^-4 A/cm² with increasing the deposition potential of -0.3 to -0.6V, respectively. Further, Cu2O thin films obtained at -0.6V have the minimum charge transfer resistance (Rct) than Cu2O thin films synthesized at -0.3 to -0.5V, suggesting that Cu2O thin films produced at -0.6V have the highest electron transfer efficiency.