Graphene oxide nanostructure: Structural properties for high-performance nanoelectronics

Abstract

Reduced graphene oxide (rGO) nanostructured films are produced by chemical reduction of graphene oxide with hydrazine hydrate. Structural, electrical, and mechanical properties are measured on the same sample set not on separate batches, not inferred from synthesis conditions, but characterised directly and in sequence. X-ray diffraction (XRD) patterns collected over 2θ = 5°–80° (Cu Kα, λ = 0.15406 nm) display a dominant (002) reflection at 2θ ≈ 25.4°, a secondary (100) reflection at 2θ ≈ 43.5°, and weaker (004) and (110) features, confirming the hexagonal graphitic symmetry of the partially restored sp² network. Scherrer analysis of the (002) reflection applying D = Kλ/(β cosθ) with K = 0.89, an instrument-corrected FWHM β = 0.0453 rad, and a Bragg angle θ = 12.70° places the mean coherent stacking length D ≈ 3.2 nm (interlayer spacing d₀₀₂ = 0.350 nm), confirming the nanocrystalline character of the films. A structural parameter table (Table 1) summarises all XRD-derived quantities, including d-spacing, crystallite size, and micro-strain. Hall effect measurements give a zero-field electron mobility of 2450 cm²·V⁻¹·s⁻¹ and p-type carrier character; four-point probe conductivity (σ ≈ 350 S·m⁻¹) confirms Ohmic transport across the percolating sp² network. Uniaxial tensile testing shows rGO sustaining ~28–32 MPa threefold to fourfold above the graphene oxide precursor (~7–9 MPa). Three-point bending tests identify two mechanically distinct regimes: a linear elastic response (k ≈ 0.145 N·mm⁻¹) up to 3.2 N, beyond which deflection reaches 44 mm at 5 N and effective stiffness falls to ~0.08 N·mm⁻¹. The results provide quantitative benchmarks for flexible nanoelectronic substrates, conformable nanosensor platforms, and optoelectronic devices.