Analysis of flip flop design using nanoelectronic single electron transistor
DOI:
https://doi.org/10.56053/1.1.23Keywords:
Logic circuits, Coulomb blockage, Nanoelectronics, Single electron deviceAbstract
Single Electron Transistor (SET) is a nanoelectronic device that operates under the controlled mode of tunneled individual electrons. In this paper, a comparative analysis was performed employing SET based D-Flip flop with conventional logic D-flip flop. SET is eminent nanoscale devices that have low power dissipation, high speed and performance. The flip flop design was simulated using SIMON simulator and the stability of its operation was analyzed applying the Monte-Carlo method that represented stability with low power dissipation and matched the functionality of traditional CMOS devices.
References
-[1] K. F. Goser, C. Pacha, A. Kanstein, M. L. Rossmann, Proc. IEEE 85 (1997) 558
-[2] Grabert, Hermann, Michel H. Devoret, eds.Single charge tunneling: Coulomb blockade phenomena in nanostructures. 294. Springer Science & Business Media, (2013)
-[3] Likharev, Konstantin K., Proceedings of the IEEE 87 (1999) 606-632
-[4] International technology roadmap for semiconductors (2012)
-[5] Konstantin K. Likharev. Journal of Nanoelectronics and Optoelectronics, 3 (2008) 203
-[6] C. J. Amsinck, N. H. Di Spigna, D. P. Nackashi, P. D. Franzon. Nanotechnology, 16 (2005) 2251
-[7] Likharev K K. Hybrid, Proc. of Nanotech 5 (2007) 552
-[8] S.H.Jo and W.Lu, IEEE Electron Device Letters 8 (2008) 392
-[9] McNeil, R. P. G., et al. Nature 477 (2011) 439
-[10] M. Kataoka, M. R. Astley, A. L. Thorn, D. K. L. Oi, C. H. W. Barnes, C. J. B. Ford, D. Andeson, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, Phys. Rev. Lett. 102 (2009) 56801
-[11] Wasshuber, Christoph, Hans Kosina, and Siegfried Selberherr. Electron Devices, IEEE Transactions on 45 (1998) 2365
-[12] Sergey Kubatkin, Andrey Danilov, MattiasHjort, JrmeCornil, JeanLucBrdas, NicolaiStuhr-Hansen, Per Hedegrd, Thomas Bjrnholm. Nature, 425 (2003) 698
-[13] U. Hashim, A. Rasmi, S. Sakrani, Int. J. Nanoelectronics and Materials 1 (2008) 21
-[14] TsimperidisIoannis, I. Karafyllidis, and Antonios Thanailakis, Microelectronics Journal 35 (2004) 471
-[15] Amit Chaudhry, JatindarNath Roy, Int. J. Nanoelectronics and Materials 4 (2011) 93
-[16] AnbarasuPaulthurai, BalamuruganDharmaraj, Microelectronics and Solid State Electronics 4 (2012) 94
-[17] Anbarasu.Paulthurai, Balamurugan.Dharmaraj, Int. J. Nanoelectronics and Materials 7 (2014) 149