Analysis of bias voltage’s effect on triple barrier of gallium nitride/aluminum gallium nitride quantum well. Experimental and Theoretical NANOTECHNOLOGY, [S. l.], v. 9, n. 2, p. 327–334, 2025. DOI: 10.56053/9.S.327. Disponível em: https://etnano.com/index.php/journal/article/view/161.. Acesso em: 18 mar. 2025.