Enhanced switching ratio and subthreshold swing analysis of different gate dielectric materials effect on OFET performance. Experimental and Theoretical NANOTECHNOLOGY, [S. l.], v. 9, n. 2, p. 303–310, 2025. DOI: 10.56053/9.S.303. Disponível em: https://etnano.com/index.php/journal/article/view/159.. Acesso em: 18 mar. 2025.