Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate . Experimental and Theoretical NANOTECHNOLOGY, [S. l.], v. 4, n. 1, p. 11–20, 2020. DOI: 10.56053/4.1.11. Disponível em: https://etnano.com/index.php/journal/article/view/55.. Acesso em: 16 oct. 2024.