Characterization and analysis of GaN
DOI:
https://doi.org/10.56053/3.1.33Keywords:
GaN, Optical propertiesAbstract
Electrochemical deposition method is used to prepare GaN thin films. The morphological studies using scanning electron microscopy (SEM) and analysis of photoluminescence (PL) within the refractive index and optical dielectric constant are investigated experimentally and theoretically, respectively. These investigations are found to be dependent on the growth time. The nanosize effect is noticed for sensors applications. Our calculated results agree with experimental and theoretical data.
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