Optical investigation of Si:SiO2/SiO2 film
DOI:
https://doi.org/10.56053/8.2.23Keywords:
Optical, Si, OxideAbstract
The optical properties of 30-layer [nc-Si:SiO2/ SiO2]30 periodic films have been studied. The films were prepared by alternately evaporating SiO and SiO2 onto Si(100) substrates, followed by annealing at 1100 ◦C. Spectroscopic ellipsometry spectrum analysis was used to deter- mine the optical constants of the samples via the Forouhi–Bloomer model. The optical bandgap of a single periodic film is calculated. The photoluminescence (PL) spectra of three samples with different thicknesses clearly show that there are two physical origins of the PL process.
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